| 세션명 | 콜로이드 및 분자조립 부문위원회 (I) |
|---|---|
| 발표장 | 제1회장 |
| 논문코드 | 1L1-5 |
| 발표일 | 2021-04-8 |
| 발표시간 | 15:30-15:55 |
| 논문제목 | Ultralow-dielectric-constant Amorphous Boron Nitride |
| 발표자 | 신현석 |
| 발표자 소속 | 울산과학기술원 |
| 저자 | 신현석† |
| 소속 | 울산과학기술원 |
| 논문초록 | Recommendations of IRDS require low-κ materials to possess dielectric (κ ≤ 2 by 2028), be mechanically robust, and serve as diffusion barriers against interconnect-atom migration into semiconductors. However, typical non-polar low-κ materials exhibit κ values exceeding 2 and poor thermo-mechanical properties. Here, I will demonstrate realisation of ultra-low κ values of 1.89 and 1.29 at 100 kHz and 1 MHz, respectively, in amorphous boron nitride (a-BN) via complementary metal-oxide semiconductor-compatible deposition at 400 °C. The resulting structure is mechanically robust, with excellent diffusion-barrier characteristics. Detailed structural characterisation indicates that a-BN is sp2-hybridised, with no measurable crystallinity. The breakdown strength of a 3-nm thick a-BN sample was 7.3 MV/cm. Cross-sectional transmission electron micrographs revealed no diffusion of metal atoms across a-BN under harsh conditions when compared against TiN barriers considered as reference. |
THE POLYMER SOCIETY OF KOREA